unisonic technologies co., ltd 9N65 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-618.d 9 a , 650v n-channel power mosfet ? description the utc 9N65 is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 9N65 is generally applied in high efficiency switch mode power supplies and uninterruptible power supplies. ? features * r ds(on) =1.1 ? @ v gss =10v * high switching speed * improved dv/dt capability * 100% avalanche tested ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 9N65l-ta3-t 9N65g-ta3-t to-220 g d s tube 9N65l-tf3-t 9N65g-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
9N65 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-618.d ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v drain current continuous, v gss @10v @t c =25c i d 9 a @t c =100c 5.4 a pulsed (note 2) i dm 36 a avalanche current (note 2) i ar 5.2 a avalanche energy single pulsed (note 2) e ar 16 mj repetitive (note 3) e as 375 mj peak diode recovery dv/dt (note 3) dv/dt 2.8 v/ns power dissipation(@t c =25c) to-220 p d 167 w to-220f 44 linear derating factor to-220 1.3 w/c to-220f 0.35 junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating; pulse width limit ed by max. junction temperature. 3. starting t j =25c, l=9.25mh, r g =25 ? , i as =9a. 4. i sd 5.2a, di/dt 90a/s, v dd bv dss , t j 150c ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 62 c/w to-220f 62.5 junction to case to-220 jc 0.75 c/w to-220f 2.86
9N65 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-618.d ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 650 v breakdown voltage temperature coefficient ? bv dss / ? t j reference to 25c, i d =1ma (note 3) 0.67 v/c drain-source leakage current i dss v ds =650v, v gs =0v 25 a v ds =520v, v gs =0v, t j =125c 250 gate- source leakage current forward i gss v gs =+30v +100 na reverse v gs =-30v -100 na on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =5.1a 0.85 1.1 ? dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz 1417 pf output capacitance c oss 177 pf reverse transfer capacitance c rss 7 pf switching parameters total gate charge q g v ds =520v, v gs =10v, i d =9a (note 2) 48 nc gate to source charge q gs 12 nc gate to drain ("miller") charge q gd 19 nc turn-on delay time t d ( on ) v dd =325v, i d =9a, r g =9.1 ? , r d = 62 ? (note 2) 14 ns rise time t r 20 ns turn-off delay time t d ( off ) 34 ns fall-time t f 18 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s mosfet symbol showing the integral reverse p-n junction diode. 9a maximum body-diode pulsed current (note 1) i sm 36 a drain-source diode forward voltage v sd t j =25c, i s =9a,v gs =0v(note 2) 1.5 v notes: 1. repetitive rating; pulse width limit ed by max. junction temperature. 2. pulse width 300s; duty cycle 2%. 3. uses irfib5n65a data and test conditions
9N65 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-618.d ? test circuits and waveforms v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
9N65 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-618.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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